2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm • Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation