MBQ60T65 High Speed Fieldstop Trench IGBT

MBQ60T65 High Speed Fieldstop Trench IGBT

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.85V @ IC = 60A  Eoff = 0.53mJ @ TC = 25°C  High Input Impedance.